1
$12.0624
$12.0624
10
$10.8752
$108.7520
25
$10.4272
$260.6800
100
$9.8000
$980.0000
250
$9.3968
$2,349.2000
500
$9.1168
$4,558.4000
1000
$8.8368
$8,836.8000
| TYPE | DESCRIPTION |
| Mfr | GeneSiC Semiconductor |
| Series | G3R™ |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Power Dissipation (Max) | 207W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 7.5mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V |
